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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
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High sensitive gas sensor based on vertical graphene field effect transistor.

Hang Song1, Jie Liu1, Haiyang Lu1

  • 1State Key Laboratory of Bioelectronics, School of Biology and Biomedical Engineering, Southeast University, Nanjing, 210096, People's Republic of China.

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|January 1, 2020
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Summary
This summary is machine-generated.

A novel graphene vertical field-effect transistor (VGr-FET) gas sensor demonstrates high sensitivity to ammonia and isoprene. This low-cost sensor shows potential for early diagnosis of respiratory diseases.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Sensing

Background:

  • Graphene-based field-effect transistors (FETs) offer unique electronic properties for sensing applications.
  • Controlling the interface between graphene and semiconductor layers is crucial for device performance.

Purpose of the Study:

  • To fabricate and characterize a graphene vertical field-effect transistor (VGr-FET) gas sensor.
  • To investigate the sensing mechanism and performance for various gases.
  • To evaluate the potential for medical diagnostics.

Main Methods:

  • Fabrication of VGr-FET using graphene, C60 thin film, and aluminum electrodes.
  • Utilized ionic liquid gel as a dielectric layer for gating.
  • Measured source-drain current (Ids) and analyzed I-V curves.
  • Investigated the effect of gas adsorption (water vapor, oxygen, ammonia, isoprene) on device performance.

Main Results:

  • Achieved an on/off ratio of 10^3 for the VGr-FET.
  • Calculated apparent energy barrier height between graphene and C60, modulated by gating potential.
  • Demonstrated lower limit of detection (LOD) for ammonia (86 ppb) compared to isoprene (420 ppb).
  • Attributed higher sensitivity to ammonia to its donor nature interacting with p-type graphene.

Conclusions:

  • The VGr-FET gas sensor exhibits facile fabrication, low cost, and quick response.
  • The device shows promise for the early diagnosis of severe human respiratory diseases.
  • Gating potential effectively modulates the energy barrier, enhancing transistor performance.