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Compact water-cooled surface wave plasma source for remote plasma cleaning.

Hyun Jong You1, Oleksii Girka1

  • 1Plasma Technology Research Center, National Fusion Research Institute, 37 Dongjangsan-ro, Gunsan-si, Jeollabuk-do 54004, South Korea.

The Review of Scientific Instruments
|January 3, 2020
PubMed
Summary
This summary is machine-generated.

A new compact surface wave plasma source enhances industrial throughput for semiconductor processing. This efficient design offers high radical generation for applications like plasma enhanced chemical vapor deposition chamber cleaning and dry etching.

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Area of Science:

  • Materials Science
  • Plasma Physics
  • Chemical Engineering

Background:

  • Remote plasma processing is crucial for semiconductor manufacturing.
  • Existing plasma sources face limitations in throughput and uniformity for large-scale applications.

Purpose of the Study:

  • To design and operate a compact surface wave plasma source for enhanced remote plasma processing.
  • To achieve higher radical generation and industrial throughput using a novel compact design.

Main Methods:

  • Development of a compact surface wave plasma source.
  • Operation at variable flowrates (100 SCCM H2 to 10 slm NF3).
  • Utilizing indirect water-cooling for enhanced microwave coupling.

Main Results:

  • High decomposition rates for NF3 achieved.
  • Significant etching rate for SiO2 ( > 450 nm/min) at 2.5 kW microwave power and 3-5 slm flowrate.
  • Demonstrated compactness for potential integration of multiple sources for improved uniformity and faster cleaning.

Conclusions:

  • The compact surface wave plasma source offers significant advantages in terms of size, efficiency, and performance.
  • The design facilitates high operating flowrates and decomposition rates, suitable for demanding industrial applications.
  • The source enables faster and more uniform radical cleaning and etching processes in semiconductor fabrication.