Design and validation of a ten nanosecond resolved resistive thermometer for Gaussian laser beam heating

Pulsed laser processing plays a crucial role in additive manufacturing and nanomaterial processing. However, probing the transient temperature field during the pulsed laser interaction with the processed materials is challenging as it requires both high spatial and temporal resolution. Previous transient thermometry studies have measured neither sub-100 µm spatial resolution nor sub-10 ns temporal resolution. The temperature field induced by Gaussian laser beam profiles has also not been accounted for. Here, we demonstrate a 9 ns rise time, 50 µm sized Pt thin-film sensor for probing the temperature field generated by a nanosecond pulsed laser on a semiconductor thin film. The measurement error sources and associated improvements in the thin film fabrication, sensor patterning, and electrical circuitry are discussed. We carried out the first experimental and theoretical analysis of spatial resolution and accuracy for measuring a Gaussian pulse on the serpentine structure. Transparent silica and sapphire substrates, as well as 7-45 nm insulation layer thicknesses, are compared for sensing accuracy and temporal resolution. Finally, the measured absolute temperature magnitude is validated through the laser-induced melting of the 40 nm thick amorphous silicon film. Preliminary study shows its potential application for probing heat conduction among ultrathin films.