Flexible and Transparent Thin-Film Transistors Based on Two-Dimensional Materials for Active-Matrix Display

Two-dimensional (2D) materials have attracted significant attention because of their outstanding electrical, mechanical, and optical characteristics. Because all of the conducting (graphene), semiconducting (molybdenum disulfide, MoS₂), and insulating (hexagonal boron nitride, h-BN) components can be constructed from 2D materials, thin-film transistors based on 2D materials (2D TFTs) have been developed. However, scaling-up is necessary for these technologies to go beyond their initial implementation using the mechanical exfoliation method. Furthermore, it would be beneficial to find a method to realize high flexibility and/or transparency to their full potential. In this study, large-scale, flexible, and transparent 2D TFTs are developed and demonstrated as a backplane in active-matrix organic light-emitting diodes (AMOLEDs). With the optical chemical vapor deposition of the 2D materials, flexible (bending radius < 1 mm) and transparent (transmittance > 70%) TFTs with high electrical performances (mobility ≈ 10 cm² V^-1 s^-1, on/off current ratio > 10⁶) can be achieved. Furthermore, 2D TFTs are integrated into OLEDs by connecting the source electrode of the TFT to the anode of the OLED via a single graphene film, thus demonstrating pixel-by-pixel driving through a 2D TFT array in an active-matrix configuration.