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A High-Temperature, Low-Noise Readout ASIC for MEMS-Based Accelerometers.

Min Qi1,2, An-Qiang Guo1,2, Dong-Hai Qiao1

  • 1Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China.

Sensors (Basel, Switzerland)
|January 8, 2020
PubMed
Summary

This study details a new complementary metal oxide semiconductor (CMOS) application-specific integrated circuit (ASIC) for microelectromechanical system (MEMS) accelerometers. The developed ASIC effectively converts capacitance changes into analog voltage signals with low noise performance.

Keywords:
High-temperatureInterface ASICLow-noiseMEMS accelerometers

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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Sensor Technology

Background:

  • Microelectromechanical systems (MEMS) accelerometers are crucial for motion sensing.
  • Readout circuitry is essential for translating MEMS sensor output into usable signals.
  • High-temperature operation presents significant challenges for electronic components.

Purpose of the Study:

  • To develop and characterize a CMOS application-specific integrated circuit (ASIC) for bulk-silicon MEMS accelerometers.
  • To achieve low-noise signal conversion and high sensitivity in a harsh temperature environment.
  • To demonstrate the feasibility of integrated readout electronics for MEMS sensors at elevated temperatures.

Main Methods:

  • Design and fabrication of a CMOS ASIC using a 0.18 μm process.
  • Integration of a switched-capacitor analog front-end (AFE) with correlated double sampling (CDS).
  • Incorporation of a programmable capacitor array for offset compensation and a low-noise voltage reference.

Main Results:

  • Achieved an output noise floor of -150 dBV/√Hz for the low-noise amplifier at 100 Hz and 175 °C.
  • Demonstrated an analog front-end sensitivity of 750 mV/pF at 175 °C.
  • Measured voltage reference noise floors of -133 dBV/√Hz at 10 Hz and -152 dBV/√Hz at 100 Hz at 175 °C.

Conclusions:

  • The developed CMOS ASIC provides effective low-noise readout for MEMS accelerometers.
  • The circuit exhibits robust performance at high temperatures (175 °C).
  • This work enables advanced sensing applications requiring integrated, high-performance readout electronics in demanding environments.