Related Experiment Video
Updated: Dec 31, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Understanding the Electron-Doping Mechanism in Potassium-Intercalated Single-Walled Carbon Nanotubes
Claudia Kröckel1, María Rosa Preciado-Rivas2, Victor Alexander Torres-Sánchez2
1Department of Chemistry and Pharmacy and Joint Institute of Advanced Materials and Processes (ZMP) , Friedrich-Alexander University of Erlangen-Nuremberg , Nikolaus-Fiebiger-Strasse 10 , 91058 Erlangen , Germany.
Abstract:
Single-walled carbon nanotubes (SWCNTs) can be doped with potassium, similar to graphite, leading to intercalation compounds. These binary systems exhibit a clear metallic character. However, the entire picture of how electron doping (e-doping) modifies the SWCNTs' vibrational spectra as a function of their diameter, chirality, and metallicity is still elusive. Herein, we present a detailed study of the intercalation and solid state reduction of metallic and semiconducting enriched HiPco SWCNTs. We performed a combined experimental and theoretical study of the evolution of their Raman response with potassium exposure, focusing specifically on their radial breathing mode (RBM). We found the charge donated from the potassium atoms occupies antibonding π orbitals of the SWCNTs, weakening their C-C bonds, and reducing the RBM frequency. This RBM downshift with increasing doping level is quasi-linear with a steplike behavior when the Fermi level crosses a van Hove singularity for semiconducting species. Moreover, this weakening of the C-C bonds is greater with decreasing curvature, or increasing diameter. Overall, this suggests the RBM downshift with e-doping is proportional to both the SWCNT's integrated density of states (DOS) ϱ(ε) and diameter d. We have provided a precise and complete description of the complex electron doping mechanism in SWCNTs up to a charge density of -18 me/C, far beyond that achievable by standard gate voltage studies, not being the highest doping possible, but high enough to track the effects of doping in SWCNTs based on their excitation energy, diameter, band gap energy, chiral angle, and metallicity. This work is highly relevant to tuning the electronic properties of SWCNTs for applications in nanoelectronics, plasmonics, and thermoelectricity.
More Related Videos
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
11:42Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Related Concept Videos
Electron Configuration of Multielectron Atoms
Valence Bond Theory
Electron Configurations
The relative energies of the subshells determine the order in which atomic orbitals are filled (1s, 2s, 2p, 3s, 3p,...