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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
The formation mechanism of hexagonal Mo2C defects in CVD graphene grown on liquid copper
Maryam Saeed1, Joseph D Robson2, Ian A Kinloch2
1Kuwait Institute for Scientific Research, Energy and Building Research Center, Nanotechnology and Advanced Materials Program, P.O. Box 24885, Safat, 13109, Kuwait. msaeed@kisr.edu.kw and University of Manchester, School of Materials, Oxford Road, Manchester, M13 9PL, UK.
Abstract:
Thin Mo2C hexagonal defects precipitate in CVD graphene when Mo crucibles are engaged to hold the liquid copper substrate, while these defects disappear when W crucibles are present. These defects have been identified as the thin precipitates of Mo2C. The growth mechanism of the Mo2C defects is demonstrated through thermodynamic calculations. This can be beneficial in graphene defect engineering through the vapour phase transport of the volatile MoO3 phase.
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