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Near Bandgap Excitation Inhibits the Interfacial Electron Transfer of Semiconductor/Cocatalyst

Jiawei Xue1, Mamoru Fujitsuka1, Tetsuro Majima1

  • 1The Institute of Scientific and Industrial Research (SANKEN) , Osaka University , Mihogaoka 8-1 , Osaka , Ibaraki 567-0047 , Japan.

ACS Applied Materials & Interfaces
|January 9, 2020
PubMed

Keywords:
H2 evolutionabove/near bandgap excitationelectron trappinginterfacial electron transfersemiconductor/cocatalyst

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