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Related Experiment Video

Updated: Dec 31, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale.

Raghda Makarem¹, Filadelfo Cristiano², Dominique Muller³

¹LPCNO, Université de Toulouse INSA, CNRS, UPS 135, Avenue de Rangueil, 31077Toulouse, France.

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada

|January 11, 2020

Summary

This summary is machine-generated.

This study introduces an improved quantification method for scanning transmission electron microscopy/energy-dispersive X-ray spectroscopy (STEM/EDX) measurements. The new technique enhances accuracy in determining 1D dopant profiles, crucial for nanodevice characterization.

Keywords:

EDX STEM dopant profiling nanodevices quantification methods

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Last Updated: Dec 31, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

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Published on: January 19, 2018

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry

Published on: April 29, 2020

Area of Science:

Materials Science
Nanotechnology
Analytical Chemistry

Background:

Accurate dopant profile quantification is essential for advanced nanodevices.
Existing STEM/EDX methods face challenges in precision at the nanoscale.

Purpose of the Study:

To develop an improved quantification technique for STEM/EDX measurements of 1D dopant profiles.
To enhance the accuracy and reliability of dopant density measurements in nanostructures.

Main Methods:

An iterative absorption correction procedure using density models.
Calibration and error estimation based on linear regression and error propagation.
Application to Arsenic (As) profile measurement in a FinFET test structure.

Main Results:

Quantitative results obtained for dopant atomic densities below 1% at the nanometer scale.
Successful calibration of Cliff-Lorimer coefficients using Rutherford Back Scattering (RBS) measurements.
Calculation of measurement error and detection limit for the experimental setup.

Conclusions:

The proposed technique enables accurate STEM/EDX quantification of dopant profiles in nanodevices.
The method is effective for low dopant concentrations and nanoscale dimensions.
Future improvements in detection limits are possible by increasing observation time.