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An electrically pumped surface-emitting semiconductor green laser.

Yong-Ho Ra1,2, Roksana Tonny Rashid1, Xianhe Liu1,3

  • 1Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada.

Science Advances
|January 11, 2020
PubMed
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This summary is machine-generated.

Researchers developed a novel green laser without traditional mirrors, using gallium nitride nanocrystals. This breakthrough enables lower-threshold surface-emitting lasers for various applications.

Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanotechnology

Background:

  • Surface-emitting semiconductor lasers are crucial for data communications, sensing, and augmented reality.
  • Conventional lasers often rely on distributed Bragg reflectors (DBRs), which present fabrication challenges, especially for specific wavelengths.
  • Developing efficient, low-threshold lasers in the visible spectrum remains an active area of research.

Purpose of the Study:

  • To demonstrate the first all-epitaxial, distributed Bragg reflector (DBR)-free electrically injected surface-emitting green laser.
  • To utilize photonic band edge modes in gallium nitride (GaN) nanocrystal arrays as an alternative to DBRs.
  • To achieve a low threshold current density for visible spectrum laser diodes.

Main Methods:

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  • Fabrication of dislocation-free gallium nitride (GaN) nanocrystal arrays.
  • Exploitation of photonic band edge modes within the GaN nanocrystal structure.
  • Electrical injection to achieve laser emission at ~523 nm.

    • Main Results:

    • Successful demonstration of an electrically injected, DBR-free surface-emitting green laser.
    • Operation wavelength achieved at approximately 523 nm.
    • A threshold current density of ~400 A/cm² was recorded, significantly lower than previous blue laser diodes.

    Conclusions:

    • This work presents a new approach for developing surface-emitting laser diodes across the ultraviolet to deep visible spectrum (200-600 nm).
    • The use of GaN nanocrystal arrays and photonic band edge modes overcomes limitations associated with DBRs, lattice mismatch, and substrate availability.
    • This advancement paves the way for next-generation optoelectronic devices with improved performance and broader spectral coverage.