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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Network Covalent Solids02:18

Network Covalent Solids

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Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
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Energy Bands in Solids01:01

Energy Bands in Solids

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Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
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Valence Bond Theory02:42

Valence Bond Theory

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Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
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Lewis Structures of Molecular Compounds and Polyatomic Ions02:54

Lewis Structures of Molecular Compounds and Polyatomic Ions

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To draw Lewis structures for complicated molecules and molecular ions, it is helpful to follow a step-by-step procedure as outlined:
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Classification with a disordered dopant-atom network in silicon.

Tao Chen1, Jeroen van Gelder1, Bram van de Ven1

  • 1NanoElectronics Group, MESA+ Institute for Nanotechnology and BRAINS Center for Brain-Inspired Nano Systems, University of Twente, Enschede, The Netherlands.

Nature
|January 17, 2020
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Summary
This summary is machine-generated.

Researchers developed a novel silicon-based nanomaterial system for efficient, parallel nonlinear classification. This approach, inspired by neural networks, performs complex computations at the nanoscale, paving the way for energy-efficient computing.

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Area of Science:

  • Materials Science
  • Computational Neuroscience
  • Machine Learning

Background:

  • Biological and artificial neural networks excel at classification tasks.
  • Nonlinear projections in machine learning improve classification but are computationally expensive.
  • Physical materials offer high computational density, parallelism, and energy efficiency for nonlinear projections.

Purpose of the Study:

  • To develop a nanoscale, parallel approach for nonlinear classification and feature extraction.
  • To exploit the nonlinearity of hopping conduction in a tunable silicon dopant network.
  • To demonstrate a new paradigm for small-footprint, energy-efficient computation.

Main Methods:

  • Utilized an electrically tunable network of boron dopant atoms in silicon.
  • Employed artificial evolution to reconfigure the dopant network for specific computational functions.
  • Tested the system on Boolean logic gates and handwritten digit classification (Modified National Institute of Standards and Technology database).

Main Results:

  • Successfully realized all Boolean logic gates up to room temperature, demonstrating nonlinear classification.
  • Evolved dopant networks performed four-input binary classification on handwritten digits with improved accuracy over linear classifiers.
  • The material-based filters achieved substantial classification accuracy improvements.

Conclusions:

  • Established a paradigm for silicon-based electronics enabling small-footprint and energy-efficient computation.
  • Demonstrated the potential of nanoscale material systems for complex computational tasks.
  • The approach offers a promising alternative to conventional, computationally expensive methods for nonlinear classification.