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Updated: Dec 30, 2025

Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization
Published on: October 6, 2019
L Leandro1, R Reznik2, J D Clement1
1DTU Department of Photonics Engineering, Technical University of Denmark, 2800, Kgs. Lyngby, Denmark.
Researchers developed a new formula for the bandgap of wurtzite aluminum gallium arsenide (AlGaAs) nanowires. This study suggests wurtzite AlGaAs is a direct bandgap material, opening new avenues for semiconductor research.
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