Symmetry-Reduction Enhanced Polarization-Sensitive Photodetection in Core-Shell SbI3 /Sb2 O3 van der Waals

Mengqi Xiao1, Huai Yang1, Wanfu Shen2

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China.

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
867
Insensitive Nuclei Enhanced by Polarization Transfer (INEPT)01:15

Insensitive Nuclei Enhanced by Polarization Transfer (INEPT)

Insensitive Nuclei Enhanced by Polarization Transfer (INEPT) is an advanced Nuclear Magnetic Resonance (NMR) technique specifically designed to detect and enhance the signals of low-abundance nuclei, such as carbon-13 and nitrogen-15, in small molecules. The fundamental principle behind INEPT is the transfer of polarization from a more abundant and highly polarizable nucleus, typically hydrogen-1, to the low-abundance nucleus of interest. This process effectively boosts the NMR signal of the...
921
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
495
Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
38.5K
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.6K
¹³C NMR: Distortionless Enhancement by Polarization Transfer (DEPT)01:20

¹³C NMR: Distortionless Enhancement by Polarization Transfer (DEPT)

When proton-coupled carbon-13 spectra are simplified by a broadband proton decoupling technique, structural information about the coupled protons is lost. Distortionless enhancement by polarization transfer (DEPT) is a technique that provides information on the number of hydrogens attached to each carbon in a molecule. While the DEPT experiment utilizes complex pulse sequences, the pulse delay and flip angle are specifically manipulated. The resulting signals have different phases depending on...
1.5K