Related Experiment Video
Updated: Dec 30, 2025

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Surrounding Channel Nanowire Tunnel Field-Effect Transistor with Dual Gate to Reduce a Hump Phenomenon
Ye Sung Kwon1, Seong-Hyun Lee1, Yoon Kim2
1Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea.
Abstract:
The tunnel field-effect transistor (TFET) with surrounding channel nanowire (SCNW) structure promises better performance than the conventional planar TFET in terms of subthreshold swing (SS) and on-current (ION). In spite of the advantages of SCNW TFET, there are some technical issues in the aspects of a hump phenomenon in subthreshold region and a high ambipolar current (IAMB) in off-state. In order to overcome these issues, a novel dual-gate SCNW TFET (DG-SCNW TFET) with differential gate work functions (WFs) and a gate-drain underlap is proposed and studied by using technology computer-aided design (TCAD) simulation. In addition, a hetero-junction with SiGe source is applied to improve the device performance. Finally, it is confirmed that the optimized DG-SCNW TFET shows the remarkable performance comparing with the control device.
Related Concept Videos
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
Field Effect Transistor
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

