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Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions
Botond Sánta1,2, Dániel Molnár1,2, Patrick Haiber3
1Department of Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary.
Beilstein Journal of Nanotechnology
|January 25, 2020
Summary
This study explores Ag/AgI memristive devices for high-speed neuromorphic computing. These nanodevices show stable resistive switching, demonstrating potential for advanced computing architectures.
Area of Science:
- Materials Science
- Nanotechnology
- Computer Engineering
Background:
- Nanometer-scale resistive switching devices are crucial for scalable in-memory and neuromorphic computing.
- These devices operate at high speeds and low power due to mobile ionic species.
- The Ag/AgI material system is a less-explored candidate for such applications.
Purpose of the Study:
- To investigate the memristive behavior of the Ag/AgI material system.
- To demonstrate stable resistive switching and analyze its dynamical aspects.
- To explore the high-speed switching capabilities for neuromorphic circuits.
Main Methods:
- Utilized a scanning probe microscope with a PtIr tip to create a point contact Ag/AgI/PtIr nanojunction.
- Demonstrated stable resistive switching duty cycles.
- Employed a custom microwave setup for time-resolved studies using sub-nanosecond voltage pulses.
Main Results:
- Stable resistive switching characteristics were observed in the Ag/AgI/PtIr nanojunctions.
- Detailed investigation of the dynamical aspects of non-volatile operation was performed.
- High-speed switching capabilities were confirmed using sub-nanosecond voltage pulses.
Conclusions:
- The Ag/AgI material system exhibits promising memristive behavior.
- Stable and fast resistive switching makes these devices suitable for neuromorphic applications.
- Ag-based filamentary memristive nanodevices are potential hardware elements for high-speed neuromorphic circuits.
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