An in situ rewritable electrically-erasable photo-memory device for terahertz waves
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Published on: November 11, 2013
Luyao Xiong1, Bin Liu1, Dandan Liu1
1Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing Advanced Innovation Center for Imaging Theory and Technology, Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Beijing Key Laboratory of Metamaterials and Devices, Department of Physics, Capital Normal University, Beijing, 100048 China. bzhang@cnu.edu.cn sjl-phy@cnu.edu.cn.
Abstract:
A terahertz read-only in situ electrically-erasable rewritable photo-memory device based on a perovskite:Ag (perovskite with Ag nanoparticles added)/SnO2/PEDOT:PSS hetero-junction structure is reported. Under low optical excitation, considerable terahertz amplitude modulation in a perovskite:Ag/PEDOT:PSS hybrid structure was achieved. When a SnO2 nanoparticle film was inserted between the perovskite and PEDOT:PSS layer, the attenuation of the terahertz signal was weaker than that of the perovskite:Ag/PEDOT:PSS hybrid structure; however, the SnO2 nanoparticle film considerably prolonged the recovery time of the modulated terahertz wave in air after photo-excitation was stopped. In addition, when bias voltages were applied to the perovskite:Ag/PEDOT:PSS and perovskite:Ag/SnO2/PEDOT:PSS hybrid structures, respectively, the terahertz signals recovered rapidly for both structures. Consequently, the photo-memory functionality was achieved based on a perovskite:Ag/SnO2/PEDOT:PSS hybrid structure with an in situ method for erasing stored information.
