Facile Synthesis of [Cu(SCH₃ )]_∞ Nanowires with High Charge Mobility

[Cu(SCH₃ )]_∞ nanowires with lengths on the order of hundreds of micrometers were obtained with a facile method from the reaction of Cu(NO₃ )₂ ⋅3 H₂ O, dimethyl sulfoxide (DMSO), and water under hydrothermal conditions within a large range of DMSO/water ratios and at various temperatures. These highly crystalline, thermally stable (under vacuum) nanowires are p-type conducting and have a hole mobility as high as 2 cm²  V^-1  S^-1 , which is 10² -10⁵  times higher than previously reported values. The high hole mobility may demonstrate their promising future in various electronic-device applications.