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Electric Field- and Current-Induced Electroforming Modes in NbO
Sanjoy Kumar Nandi1, Shimul Kanti Nath1, Assaad E El-Helou2
1Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
ACS Applied Materials & Interfaces
|January 29, 2020
Summary
Electroforming in Nb/NbOₓ/Pt devices shows two distinct modes. Film conductivity dictates whether field-induced or current bifurcation mechanisms dominate conductive filament formation.
Area of Science:
- Materials Science
- Solid State Physics
- Device Physics
Background:
- Electroforming initiates memristive behavior in metal/oxide/metal devices by forming conductive filaments.
- Understanding filament formation mechanisms is crucial for memristor device optimization.
Purpose of the Study:
- To investigate and differentiate electroforming mechanisms in Nb/NbOₓ/Pt devices.
- To correlate conductive filament distribution with device conductivity and electroforming modes.
Main Methods:
- Photoresist-based mapping of conductive filament spatial distribution.
- Current-voltage (I-V) characterization.
- In situ thermoreflectance measurements.
- Finite element modeling (FEM) of current distribution.
Main Results:
- Two distinct electroforming modes were identified based on NbOₓ film conductivity.
- Low-conductivity films exhibit random filament distribution, consistent with field-induced weakest-link mechanism.
- High-conductivity films show central filament concentration, associated with current bifurcation into low and high current density regions.
Conclusions:
- The dominant electroforming mode is dependent on the film's conductivity.
- Field-induced electroforming prevails in low-conductivity films, while current bifurcation dominates in high-conductivity films.
- These findings provide critical insights into memristor device physics and fabrication.
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