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Superconducting phase transitions in disordered NbTiN films.
M V Burdastyh1,2, S V Postolova1,3, T Proslier4
1A. V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk, 630090, Russia.
Disordered superconducting thin films exhibit a smooth transition from a superconductor-normal metal state to a superconductor-insulator state. This transition occurs via a Bose metal state when sheet resistance exceeds a critical value.
Area of Science:
- Condensed matter physics
- Materials science
Background:
- Superconductivity suppression in disordered systems is a key challenge.
- Understanding the superconductor-normal metal transition (SMT) is crucial.
Purpose of the Study:
- Investigate superconducting niobium-titanium-nitride (Nb1-xTixN) thin films.
- Characterize the transition from SMT to superconductor-insulator transition (SIT).
Main Methods:
- Atomic layer deposition (ALD) for thin film growth.
- Variable temperature sheet resistance measurements.
- Analysis of sheet resistance saturation to detect Bose metal state.
Main Results:
- Observed a smooth crossover from SMT to SIT via a Bose metal state.
- Identified low-temperature saturation in sheet resistance indicating the Bose metal state.
- Demonstrated SIT occurs when Rmax exceeds Rq = h/4e2.
Conclusions:
- The Bose metal state acts as an intermediate phase in the disorder-driven transition.
- The critical sheet resistance Rq = h/4e2 determines the onset of SIT in these films.
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