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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Tunnel electroresistance (TER) is a phenomenon in ferroelectric tunnel junctions, attributed to polarization reversal.
  • Existing TER mechanisms rely on complex ferroelectric materials and interfaces.

Purpose of the Study:

  • To investigate alternative mechanisms for electroresistance beyond ferroelectric polarization.
  • To explore the potential of simpler metal-oxide junctions for non-volatile resistance switching.
  • To extend the electroresistance concept to superconducting systems.

Main Methods:

  • Fabrication of metal-oxide junctions, including direct metal-cuprate superconductor contacts.
  • In operando monitoring of junction conductance spectra to track changes in oxide stoichiometry.
  • Investigation of electroresistance in junctions with and without ferroelectric interlayers.
  • Analysis of superconducting quasiparticle tunneling in response to applied voltage.

Main Results:

  • Demonstrated electroresistance in metal-oxide junctions via reversible redox reactions modifying the oxide ground-state.
  • Identified electrochemistry as the dominant mechanism, even with a ferroelectric interlayer present.
  • Observed significantly enhanced switching effects for superconducting quasiparticle tunneling compared to normal electrons.
  • Established a functional equivalence between redox-driven electroresistance and ferroelectric TER.

Conclusions:

  • Redox reactions in metal-oxide interfaces offer a viable and simpler alternative to ferroelectric polarization for achieving electroresistance.
  • The findings pave the way for novel non-volatile memory devices, particularly Josephson memory based on superconducting quasiparticle tunneling.
  • This work broadens the understanding of electroresistance and its potential applications in next-generation electronics.