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A systematic method for simulating total ionizing dose effects using the finite elements method.

Eleni Chatzikyriakou1, Kenneth Potter1, C H de Groot1

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Summary
This summary is machine-generated.

This study simulates carrier transport and trapping in thick oxides for field-effect transistor (FET) technologies under total ionizing dose effects. The finite element method calibrated experimental data, extracting trap densities and activation energies.

Keywords:
Carrier transportFinite elements methodMOSSynopsysTotal ionizing dose

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Area of Science:

  • Semiconductor device physics
  • Radiation effects in electronics
  • Materials science

Background:

  • Total ionizing dose (TID) effects in Field-Effect Transistors (FETs) are critical for device reliability.
  • Understanding carrier transport and trapping mechanisms within the oxide layer is essential for accurate simulation.
  • Existing models may not fully capture the complexities of carrier behavior in thick oxides under irradiation.

Purpose of the Study:

  • To systematically simulate carrier transport and trapping in thick oxides relevant to FET technologies.
  • To apply the finite element method for modeling radiation-induced effects.
  • To calibrate simulation results with experimental data from irradiated capacitors.

Main Methods:

  • Utilized the finite element method (FEM) within the Synopsys Sentaurus platform.
  • Simulated carrier generation, transport (direct contact and thermionic emission), and trapping in thick oxides.
  • Applied the model to calibrate experimental results from 400 nm capacitors irradiated at 11.6 kRad and 58 kRad.

Main Results:

  • Successfully simulated carrier transport and trapping phenomena in thick oxides.
  • Calibrated simulation results with experimental data, validating the model's accuracy.
  • Discussed drift-diffusion-enabled trapping and other physics-related issues.

Conclusions:

  • The finite element method provides a robust approach for simulating TID effects in FETs.
  • Effective bulk trap densities and activation energies were successfully extracted.
  • The study contributes to a better understanding of radiation hardness in semiconductor devices.