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Formation of N2 bubbles along grain boundaries in (ZnO)1-x(GaN)x: nanoscale STEM-EELS studies
Calliope Bazioti1, Vegard S Olsen, Andrej Y Kuznetsov
1Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, N-0316 Oslo, Norway. kalliopi.bazioti@smn.uio.no.
Physical Chemistry Chemical Physics : PCCP
|February 5, 2020
Abstract:
Direct evidence of N2 formation after annealing of (ZnO)1-x(GaN)x alloys was revealed. N2 was trapped by VZn+Ga-clusters, forming faceted voids along grain boundaries. This study shows that N-N bonding is a competitive path for nitrogen after annealing, in addition to the increasing Ga-N bonds, indicating that N in O substitution sites (NO) is not a stable configuration.
