Remarkable improved photoelectric performance of SnS₂ field-effect transistor with Au plasmonic nanostructures

The development of photoelectric devices for high integration and miniaturization in the semiconductor industry can be pushed forward by the thriving research of two-dimensional layered metal dichalcogenides (2D-LMDs). SnS₂ nanosheets have an evident photoresponse to both ultraviolet and partial visible light, but only with a fair photoelectric performance limited by their atomic-layer thickness. Here, we report a convenient and simple method to dramatically enhance the electrical and photoelectric performance of the SnS₂ flake. By integrating SnS₂ with Au plasmonic nanostructures, the photocurrent (I _ph) increased by over 20 times. The corresponding responsivity (R), light gain (G), and detectivity (D*) have been improved by ∼2200%, 2200% and 600%, respectively. The responsivity and detectivity of the Au NPs-SnS₂ field-effect transistor (FET) at 532 nm are 1125.9 A W^-1 and 2.12 × 10¹¹ Jones. Though atomically thin, the hybrid SnS₂ photodetector, benefiting from local surface plasmonic resonance, achieves an excellent photoelectric performance that is not usually possible with a pristine SnS₂-only device.