Related Experiment Video
Updated: Dec 29, 2025

Solid-state Graft Copolymer Electrolytes for Lithium Battery Applications
Published on: August 12, 2013
Polaron hopping barriers and rates in semiconducting polymers
Joel H Bombile1, Shreya Shetty1, Michael J Janik1
1Pennsylvania State University, University Park, PA 16802, USA. stm9@psu.edu.
Abstract:
Conjugated polymers are potential next-generation materials for organic electronic devices. The ability of these materials to transport charges is a key factor limiting their performance. Charge carriers in conjugated polymers are localized by disorder and polaronic effects. Charge transport in these materials is often described by thermally activated hopping, with a rate given by Marcus theory. The polaron hopping activation energy determines the temperature dependence of the Marcus rate. This energy barrier is dictated by the transition state, in which the charge carrier is equally divided between the initial and final locations. The prefactor for the polaron hopping rate is set by the charge tunneling rate between the initial and final locations. We use a tight-binding polaron model, in which charge carriers are stabilized by both nuclear reorganization and polarization of the surrounding dielectric, to compute the activation energy, charge tunneling rate and overall rate constant for intrachain and interchain charge hopping processes in poly(3-hexylthiophene) (P3HT) crystalline lamellae and amorphous melts. Charge transport in these two environments is limited by interchain hopping processes. Both hopping barriers and rates predicted by the model are in good agreement with experiments on a variety of crystalline and amorphous P3HT materials. Qualitatively, the barriers largely depend on how well the transition state is stabilized by polarization effects, and on the hopping integral between the initial and final locations, both of which penalize hopping over longer distances.
More Related Videos
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Cationic Chain-Growth Polymerization: Mechanism
Types of Semiconductors
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...

