Sensitive Cross-Linked SnO₂:NiO Networks for MEMS Compatible Ethanol Gas Sensors

Nowadays, it is still technologically challenging to prepare highly sensitive sensing films using microelectrical mechanical system (MEMS) compatible methods for miniaturized sensors with low power consumption and high yield. Here, sensitive cross-linked SnO₂:NiO networks were successfully fabricated by sputtering SnO₂:NiO target onto the etched self-assembled triangle polystyrene (PS) microsphere arrays and then ultrasonically removing the PS microsphere templates in acetone. The optimum line width (~ 600 nm) and film thickness (~ 50 nm) of SnO₂:NiO networks were obtained by varying the plasma etching time and the sputtering time. Then, thermal annealing at 500 °C in H₂ was implemented to activate and reorganize the as-deposited amorphous SnO₂:NiO thin films. Compared with continuous SnO₂:NiO thin film counterparts, these cross-linked films show the highest response of ~ 9 to 50 ppm ethanol, low detection limits (< 5 ppm) at 300 °C, and also high selectivity against NO₂, SO₂, NH₃, C₇H₈, and acetone. The gas-sensing enhancement could be mainly attributed to the creating of more active adsorption sites by increased stepped surface in cross-linked SnO₂:NiO network. Furthermore, this method is MEMS compatible and of generality to effectively fabricate other cross-linked sensing films, showing the promising potency in the production of low energy consumption and wafer-scale MEMS gas sensors.