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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Switchable crossed spin conductance in a graphene-based junction: The role of spin-orbit coupling
Razieh Beiranvand1,2, Hossein Hamzehpour3
1Physics Group, Department of Basic Science, Ayatollah Boroujerdi University, Boroujerd, Iran. razieh.beiranvand@gmail.com.
Abstract:
We theoretically investigate the crossed spin conductance (CSC) of a graphene-based heterostructure consists of ferromagnet, Rashba spin-orbit and superconductor regions. Using Dirac Bogoliubov-de Gennes formalism in the ballistic regime, we show that in the presence of Rashba spin-orbit coupling there are an anomalous crossed Andreev reection and spin-ipped co-tunneling in the process of quantum transport. We demonstrate that the CSC can be reversed with respect to charge conductance by tuning the Rashba spin-orbit coupling which experimentally can be adjusted by the applied perpendicular electric field on the graphene sheet. This feature in addition to a long spin relaxation time of Dirac fermions in graphene proposes designing a device with a non-local spin switch which is crucial for spintronics circuits.
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