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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Tunable wavevector filtering in borophane based normal metal-barrier-normal metal junctions.

Prasun Das1, Sangita De Sarkar2, Asim Kumar Ghosh1

  • 1Department of Physics, Jadavpur University, 188 Raja Subodh Chandra Mallick Road, Kolkata 700032, India.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|February 8, 2020
PubMed
Summary
This summary is machine-generated.

Researchers investigated electron transport in monolayer borophane, finding a tunable transmission gap. This discovery enables the development of novel borophane-based nano-electronic devices and tunable wavevector filters.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • Monolayer borophane exhibits unique Dirac electron properties.
  • Understanding electron transport is crucial for novel electronic devices.

Purpose of the Study:

  • To analyze Dirac electron transport across a normal metal-barrier-normal metal interface in monolayer borophane.
  • To investigate the influence of barrier width, incident energy, and transverse momentum on transmission probability and conductance.

Main Methods:

  • Theoretical analysis of transmission probability.
  • Calculation of ballistic tunneling conductance.
  • Examination of propagating and evanescent modes within the barrier.

Main Results:

  • A tunable transmission gap was identified in the spectrum.
  • Conductance behavior (oscillatory or decaying) depends on propagating/evanescent modes, controlled by energy and barrier strength.
  • A minimum in conductance occurs when incident energy matches barrier height due to evanescent modes.

Conclusions:

  • Monolayer borophane can host a tunable wavevector filter.
  • Findings have potential applications in borophane-based nano-electronic devices.