Synthesis of novel BiVO4/Cu2O heterojunctions for improving BiVO4 towards NO2 sensing properties
Shouli Bai1, Qiangqiang Li1, Ning Han2
1State Key Laboratory of Chemical Resource Engineering, Beijing Key Laboratory of Environmentally Harmful Chemicals Analysis, Beijing University of Chemical Technology, Beijing 100029, China.
Abstract:
To develop a high sensitive and low temperature NO2 gas sensor, the novel BiVO4/Cu2O heterojunctions were synthesized by a modified metal organic decomposition method to decorate BiVO4 nanoplates using Cu2O nanoparticles for enhancement of BiVO4 sensing performance to NO2. The structure and morphology of BiVO4, Cu2O and BiVO4/Cu2O composites were characterized by XRD, SEM and TEM spectra. The results indicate that the BiVO4/Cu2O heterojunctions are composed of monoclinic BiVO4 nanoplates with the thickness about 1.0-1.2 μm and 30-40 nm diameters of cubic Cu2O nanoparticles. The gas-sensing tests display that the composite exhibits rapid and linear responses to low concentration NO2 (from 100 ppb to 8.0 ppm), the highest response reaches 4.2 towards 4 ppm NO2 at 60 °C and relative humidity of 28.3%, which is more than 2 times of pure BiVO4 at the same condition. The enhanced sensing properties benefit from the novel p-n heterojunction between BiVO4 and Cu2O, which forms a depletion layer at the interface, leading to resistance increase of composites in NO2. The work demonstrates the as-synthesized BiVO4/Cu2O is a promising sensing material to detect NO2 gas.
More Related Videos
09:22Synthesis and Performance Evaluations of ZnCoS/ZnCdS with Twin Crystal Structure for Multifunctional Redox Photocatalysis in Energy Applications
Published on: July 25, 2025
09:09A Facile Synthetic Method to Obtain Bismuth Oxyiodide Microspheres Highly Functional for the Photocatalytic Processes of Water Depuration
Published on: March 29, 2019
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
