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Updated: Dec 28, 2025
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaO Film
Yuting Chen1, Yu Yan1, Jianwen Wu1
1Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin 300384, China.
Abstract:
A flexible resistive switching (RS) memory was fabricated on a Ta/TaO/Pt/polyimide (PI) structure with various TaO thicknesses (5, 10, and 15 nm). The oxygen vacancy (VO) concentrations in the TaO films were also adjusted by controlling the oxygen partial pressure during TaO deposition to obtain different electroforming (EF) behaviors. When the devices of Ta/TaO/Pt/PI showed the EF-free characteristic, the reliability and endurance performance were greatly improved compared to those of devices with EF behavior. The resistive crossbar array using the thinnest (5 nm) TaO film showed high uniformity and endurance performance up to 108 switching cycles even after bending to a 2 mm radius 10 000 times. However, for the EF samples, the endurance performance was much lower and involved the reset failure, even with the 5 nm TaO film.
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