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Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film
Iulia Salaoru1, Christos Christodoulos Pantelidis1
1Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester LE1 9BH, UK.
Micromachines
|February 14, 2020
Summary
This study explores the memory capabilities of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) memory cells. Researchers found these cells show reliable bipolar switching, a key feature for electronic memory applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Solid-State Physics
Background:
- Poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is a conductive polymer with potential applications in electronic devices.
- Organic memory cells offer advantages such as low cost and flexibility.
- Understanding the switching mechanisms in PEDOT:PSS based devices is crucial for their development.
Purpose of the Study:
- To investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) in a cross-bar structure.
- To characterize the switching properties, endurance, and retention of Al/PEDOT:PSS/Al memory cells.
- To elucidate the physical mechanism behind the observed bipolar switching behavior.
Main Methods:
- Fabrication of Al/PEDOT:PSS/Al memory cells.
- Performance evaluation using current-voltage (I-V) measurements.
- Assessment of device reliability through endurance and retention time tests.
Main Results:
- The fabricated Al/PEDOT:PSS/Al cells demonstrated a clear bipolar switching behavior.
- The memory cells exhibited reproducible switching characteristics.
- Endurance and retention time tests confirmed the stability and reliability of the device.
Conclusions:
- The Al/PEDOT:PSS/Al memory cells show promising bipolar switching and reproducible behavior.
- The observed switching is attributed to electrical field-induced dipolar reorientation in PEDOT:PSS, altering its conductivity.
- These findings support the potential of PEDOT:PSS for application in resistive switching memory devices.

