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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Area of Science:

  • Organic electronics
  • Nanotechnology
  • Semiconductor devices

Background:

  • Effective utilization of vertical organic transistors (VOTs) in high current density applications requires reduced channel length and optimized source electrode structure.
  • Current VOTs typically have channel lengths around 100 nm, limiting their performance.

Purpose of the Study:

  • To present a novel device architecture for VOTs enabling high current densities.
  • To explore the potential of these devices in sensing applications.

Main Methods:

  • Applying rolled-up metallic nanomembranes as drain electrodes to enable few nanometer-thick semiconductor layers.
  • Lithographically patterning the source electrode.
  • Fabricating and characterizing vertical organic transistors.

Main Results:

  • The developed VOTs operate at ultra-low voltages.
  • High current densities of approximately 0.5 A cm-2 were achieved.
  • Current density was found to depend directly on the number of source edges for gaps wider than 250 nm.
  • The rolled-up drain electrode enabled humidity and light sensing capabilities.

Conclusions:

  • The novel device architecture offers a viable solution for high current density applications using VOTs.
  • Further optimization could lead to current densities as high as 10 A cm-2.
  • The devices show promise for advancing next-generation sensing technologies.