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Engineering Intrinsic Flexibility in Polycrystalline Molecular Semiconductor Films by Grain Boundary Plasticization
Dan Zhao1,2, Jianhua Chen1,3, Binghao Wang1
1Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States.
Journal of the American Chemical Society
|February 14, 2020
Summary
Flexible semiconducting films made from perylenediimide (PDIF-CN2) are achieved using a novel plasticization strategy. This method enhances mechanical flexibility and charge transport properties in electronic devices.
Area of Science:
- Materials Science
- Organic Electronics
- Polymer Science
Background:
- Developing flexible organic semiconductors is crucial for next-generation electronic devices.
- Perylene diimides (PDIFs) are promising n-type organic semiconductors but often lack mechanical flexibility.
- Achieving flexible films without compromising charge transport properties remains a challenge.
Purpose of the Study:
- To develop mechanically flexible films of core-cyanated perylenediimide (PDIF-CN2) molecular semiconductor.
- To investigate a novel grain boundary plasticization strategy using a specially designed polymeric binder (PB).
- To evaluate the mechanical stability and charge transport properties of the resulting blend films.
Main Methods:
- Synthesized a novel polymeric binder (PB) with a naphthalenediimide-dithiophene π-conjugated backbone end-functionalized with PDI units.
- Developed a grain boundary plasticization strategy by blending PDIF-CN2 with the novel PB.
- Characterized the morphology and mechanical flexibility of the blend films, including bending tests.
- Fabricated thin-film transistors (TFTs) using the PB/PDIF-CN2 blend films and measured their electron mobilities.
Main Results:
- Achieved mechanically flexible films of PDIF-CN2 via grain boundary plasticization.
- The blend films exhibited a homogeneous morphology, similar to pure PDIF-CN2 films, and maintained this structure upon bending to radii as small as 2 mm.
- Thin-film transistors fabricated with PB/PDIF-CN2 blends demonstrated substantial electron mobilities even after repeated bending.
- The novel PB effectively connected PDIF-CN2 crystallites at grain boundaries, preventing phase separation.
Conclusions:
- The grain boundary plasticization strategy successfully produced flexible PDIF-CN2 films with excellent mechanical and charge transport properties.
- This approach offers a new pathway for creating textured, flexible semiconducting π-electron films.
- The developed polymeric binder is effective in enhancing the mechanical robustness of molecular semiconductor films.
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