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Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor
Manabu Suzuki1, Yuki Sugama1, Rihito Kuroda1
1Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan.
Sensors (Basel, Switzerland)
|February 22, 2020
Summary
This study introduces an ultra-high-speed image sensor achieving over 100 million frames per second (Mfps) using a novel pixel-wise memory and burst correlated double sampling (CDS) operation for extended video recording.
Area of Science:
- Electronics
- Image Sensor Technology
- Semiconductor Devices
Background:
- Traditional image sensors face limitations in frame rate and record length.
- Achieving ultra-high frame rates requires innovative pixel architectures and readout techniques.
Purpose of the Study:
- To present a prototype ultra-high-speed global shutter CMOS image sensor.
- To demonstrate frame rates exceeding 100 million frames per second (Mfps).
- To achieve a long record length for high-speed video capture.
Main Methods:
- Development of a pixel-wise trench capacitor memory array architecture.
- Implementation of burst correlated double sampling (CDS) operation.
- Integration of high-density analog memory using silicon trench capacitors.
Main Results:
- Achieved over 100 Mfps frame rate with a record length of up to 368 frames.
- Confirmed a maximum frame rate of 125 Mfps at room temperature without cooling.
- Demonstrated reduced pixel output load and minimized pixel driving pulse transitions.
Conclusions:
- The developed CMOS image sensor architecture enables unprecedented high frame rates.
- Pixel-wise memory and burst CDS are key to achieving ultra-high-speed imaging.
- The technology facilitates extended high-speed video recording for various scientific applications.
