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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Related Experiment Video

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Single Molecule Fluorescence Microscopy on Planar Supported Bilayers

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Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor

Manabu Suzuki¹, Yuki Sugama¹, Rihito Kuroda¹

¹Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan.

Sensors (Basel, Switzerland)

|February 22, 2020

Summary

This study introduces an ultra-high-speed image sensor achieving over 100 million frames per second (Mfps) using a novel pixel-wise memory and burst correlated double sampling (CDS) operation for extended video recording.

Keywords:

3D stacking analog memory burst CMOS image sensor burst correlated double sampling

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Area of Science:

Electronics
Image Sensor Technology
Semiconductor Devices

Background:

Traditional image sensors face limitations in frame rate and record length.
Achieving ultra-high frame rates requires innovative pixel architectures and readout techniques.

Purpose of the Study:

To present a prototype ultra-high-speed global shutter CMOS image sensor.
To demonstrate frame rates exceeding 100 million frames per second (Mfps).
To achieve a long record length for high-speed video capture.

Main Methods:

Development of a pixel-wise trench capacitor memory array architecture.
Implementation of burst correlated double sampling (CDS) operation.
Integration of high-density analog memory using silicon trench capacitors.

Main Results:

Achieved over 100 Mfps frame rate with a record length of up to 368 frames.
Confirmed a maximum frame rate of 125 Mfps at room temperature without cooling.
Demonstrated reduced pixel output load and minimized pixel driving pulse transitions.

Conclusions:

The developed CMOS image sensor architecture enables unprecedented high frame rates.
Pixel-wise memory and burst CDS are key to achieving ultra-high-speed imaging.
The technology facilitates extended high-speed video recording for various scientific applications.