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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Published on: November 1, 2013

Single-Electron Double Quantum Dots in Bilayer Graphene.

Luca Banszerus^1,2, Samuel Möller^1,2, Eike Icking^1,2

¹JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany.

|February 22, 2020

Summary

Researchers explored electron behavior in bilayer graphene double quantum dots, finding tunable coupling crucial for building quantum computing components. These findings advance the development of spin qubits.

Keywords:

Quantum dot bilayer graphene double quantum dot

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Area of Science:

Condensed Matter Physics
Quantum Computing Hardware

Background:

Bilayer graphene offers unique electronic properties for quantum devices.
Quantum dots are essential for controlling individual electrons and enabling quantum information processing.

Purpose of the Study:

To investigate transport properties of electrostatically defined bilayer graphene double quantum dots.
To assess the device's suitability as a building block for spin qubits.

Main Methods:

Utilized gate electrodes (back, split, finger) for precise control of charge carriers in quantum dots.
Performed transport measurements in the single-electron regime.
Conducted finite bias magneto-spectroscopy to analyze excited-state spectra.

Main Results:

Achieved independent control of charge carriers (0-5) in two quantum dots.
Determined interdot tunnel rates on the order of 2 GHz.
Observed increasing interdot coupling with dot occupation, leading to single quantum dot behavior.
Spectroscopy results align with spin and valley conserving tunneling.

Conclusions:

The high tunability of bilayer graphene double quantum dots makes them promising for spin qubit development.
Understanding interdot coupling dynamics is key for designing robust quantum information processors.