High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
Menghan Jia1,2,3, Fang Wang1,2,3, Libin Tang4,5
1School of Materials Science and Engineering, Yunnan University, Kunming, 650091, China.
Nanoscale Research Letters
|February 24, 2020
Summary
Researchers developed a deep ultraviolet (UV) photodetector using a NiO/β-Ga2O3 heterojunction. This device shows high performance for UV detection applications.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Ultraviolet (UV) photodetectors are crucial for defense and optical communications.
- Wide bandgap metal oxide semiconductors offer unique properties for UV detector development.
Purpose of the Study:
- To develop and investigate a deep UV photodetector based on a NiO/β-Ga2O3 heterojunction.
Main Methods:
- The β-Ga2O3 layer was synthesized using magnetron sputtering.
- The material underwent annealing to achieve selective orientation along the ([Formula: see text] 01) crystal plane.
Main Results:
- The NiO/β-Ga2O3 heterojunction photodetector exhibited high responsivity (R) of 27.43 A/W under 245-nm illumination.
- The device achieved a maximum detectivity (D*) of 3.14 × 1012 cmHz1/2/W.
- Performance is attributed to the p-NiO/n-β-Ga2O3 heterojunction structure.
Conclusions:
- The developed NiO/β-Ga2O3 heterojunction is a promising candidate for high-performance deep UV photodetector applications.
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