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Josephson Effect and Charge Distribution in Thin Bi2 Te3 Topological Insulators
Martin P Stehno1,2, Prosper Ngabonziza1,3,4, Hiroaki Myoren5
1Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE, Enschede, The Netherlands.
Abstract:
Thin layers of topological insulator materials are quasi-2D systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, the Josephson effect, magnetotransport, and weak anti-localization are studied in bottom-gated thin Bi2 Te3 topological insulator films. The experimental carrier densities are compared to a model based on the solutions of the self-consistent Schrödinger-Poisson equations and they are in excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions.
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