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Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A

Meng Ding¹, Zhen Guo^2,3, Xuehang Chen¹

¹School of Physics and Technology, University of Jinan, 336 Nanxinzhuang West Road, Jinan 250022, China.

Nanomaterials (Basel, Switzerland)

|February 26, 2020

Summary

Surface and interface engineering enhance semiconductor photodetectors (PDs). Strategies like modifying light absorption and heterostructures improve PD performance for future low-dimensional devices.

Keywords:

charge carriers interface/interface engineering nanostructures photodetectors

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Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

Semiconductor photodetectors (PDs) convert light to electrical signals through photon-matter interactions.
Nanostructured PDs offer unique optoelectronic properties, making surface/interface engineering crucial for performance.
Key performance metrics include sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability.

Purpose of the Study:

To review recent advancements in enhancing photodetector performance.
To summarize strategies for surface/interface engineering in nanostructured PDs.
To highlight future directions for designing novel low-dimensional photodetectors.

Main Methods:

Modification of light absorption properties.
Design of novel photodetector heterostructures.
Construction of specific device geometries and electrode configurations.

Main Results:

Engineered surfaces and interfaces significantly modulate charge-carrier behavior.
Advanced structural designs lead to improved photoelectric performance in PDs.
Strategies effectively address challenges in PD sensitivity, speed, and stability.

Conclusions:

Surface/interface engineering is vital for optimizing nanostructured photodetector performance.
Designed structures offer pathways to advanced PDs with ideal properties.
This review provides insights for fabricating next-generation low-dimensional photodetectors.