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Energy Bands in Solids

Energy Bands in Solids

Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

Structures of Solids

Structures of Solids

Solids in which the atoms, ions, or molecules are arranged in a definite repeating pattern are known as crystalline solids. Metals and ionic compounds typically form ordered, crystalline solids. A crystalline solid has a precise melting temperature because each atom or molecule of the same type is held in place with the same forces or energy. Amorphous solids or non-crystalline solids (or, sometimes, glasses) which lack an ordered internal structure and are randomly arranged. Substances that...

Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Band Theory

Band Theory

When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...

Network Covalent Solids

Network Covalent Solids

Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...

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Related Experiment Video

Updated: Dec 27, 2025

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Porous Si Partially Filled with Water Molecules-Crystal Structure, Energy Bands and Optical Properties from First

Ya Shchur¹, O Pavlyuk², A S Andrushchak³

¹Institute for Condensed Matter Physics, 1 Svientsitskii str., 79011 Lviv, Ukraine.

Nanomaterials (Basel, Switzerland)

|February 28, 2020

Summary

This study explores how nanoporous silicon

Keywords:

density functional theory energy bands extinction coefficient hydrogen bond porous silicon refractive index

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Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Published on: December 21, 2015

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Last Updated: Dec 27, 2025

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

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Published on: November 9, 2015

Proof-of-Concept for Gas-Entrapping Membranes Derived from Water-Loving SiO2/Si/SiO2 Wafers for Green Desalination

Proof-of-Concept for Gas-Entrapping Membranes Derived from Water-Loving SiO2/Si/SiO2 Wafers for Green Desalination

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Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Published on: December 21, 2015

Area of Science:

Materials Science
Nanotechnology
Computational Physics

Background:

Bulk silicon (Si) is a cornerstone of modern electronics.
Nanoporous silicon exhibits unique electronic and optical properties.
Understanding pore chemistry is crucial for advanced applications.

Purpose of the Study:

Investigate the electronic band structure and optical properties of nanoporous silicon.
Analyze the impact of hydroxylation and water molecule penetration on silicon superstructures.
Characterize the evolution of hydrogen bonding within pores of varying sizes.

Main Methods:

First-principles calculations for electronic band spectrum.
Analysis of optical properties (refractive indices, extinction coefficients).
Bond valence sum approach for hydrogen bond characterization.

Main Results:

Porosity modifies the energy band-gap and optical properties of silicon.
Hydroxylation in small pores may lead to proton conductivity.
Water structuring and hydrogen bond evolution observed with increasing pore size.

Conclusions:

Nanoporous silicon's properties are tunable via pore size and functionalization.
Functionalization impacts electronic and optical characteristics.
Structural evolution of hydrogen bonds in pores provides insights into water-silicon interactions.