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Updated: Dec 27, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Nanoscale triboelectrification gated transistor
Tianzhao Bu1,2, Liang Xu1,2, Zhiwei Yang1,2
1CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083, Beijing, China.
Abstract:
Tribotronics has attracted great attention owing to the demonstrated triboelectrification-controlled electronics and established direct modulation mechanism by external mechanical stimuli. Here, a nanoscale triboelectrification-gated transistor has been studied with contact-mode atomic force microscopy and scanning Kevin probe microscopy. The detailed working principle was analyzed at first, in which the nanoscale triboelectrification can tune the carrier transport in the transistor. Then with the manipulated nanoscale triboelectrification, the effects of contact force, scan speed, contact cycles, contact region and charge diffusion on the transistor were investigated, respectively. Moreover, the manipulated nanoscale triboelectrification serving as a rewritable floating gate has demonstrated different modulation effects by an applied tip voltage. This work has realized the nanoscale triboelectric modulation on electronics, which could provide a deep understanding for the theoretical mechanism of tribotronics and may have great applications in nanoscale transistor, micro/nano-electronic circuit and nano-electromechanical system.
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