Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

703
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
703
MOSFET01:16

MOSFET

1.0K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.0K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

757
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
757
Biasing of FET01:22

Biasing of FET

619
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
619
Field Effect Transistor01:29

Field Effect Transistor

988
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
988
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.3K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Influencing factors of functional exercise adherence in stroke survivors: a cross-sectional study based on structural equation modeling.

Scientific reports·2026
Same author

MCF-YOLO: Consistency-Guided Cross-Modal Attention for Small-Object RGB-IR Detection.

Sensors (Basel, Switzerland)·2026
Same author

Salicylaldehyde-functionalized gold-nanocluster-based Ratiometric fluorescent sensor Array for metal-ion detection.

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy·2026
Same author

Optimizing Trust and Safety Regions for Text-to-Image Generation in High-Dimensional Manifold Spaces.

IEEE transactions on pattern analysis and machine intelligence·2026
Same author

EfficientIR-Det Towards Efficient and Accurate DETR for UAV Infrared Object Detection.

Sensors (Basel, Switzerland)·2026
Same author

Whole-genome resequencing of 495 <i>Pyrus</i> accessions provides insights into the genetics of agronomic traits and evolutionary history of pear.

Horticulture research·2026

Related Experiment Video

Updated: Dec 27, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K

Nanoscale triboelectrification gated transistor.

Tianzhao Bu1,2, Liang Xu1,2, Zhiwei Yang1,2

  • 1CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083, Beijing, China.

Nature Communications
|February 28, 2020
PubMed
Summary

Researchers explored nanoscale triboelectrification-gated transistors, demonstrating how mechanical stimuli can control electronic properties. This work advances tribotronics for future nano-electronic applications.

More Related Videos

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

8.1K
Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
12:20

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

Published on: July 22, 2013

18.6K

Related Experiment Videos

Last Updated: Dec 27, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K
Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

8.1K
Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
12:20

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

Published on: July 22, 2013

18.6K

Area of Science:

  • Nanoscience
  • Materials Science
  • Electronics

Background:

  • Tribotronics, the study of electronics controlled by triboelectrification, is gaining attention.
  • A direct modulation mechanism by external mechanical stimuli has been established.

Purpose of the Study:

  • To investigate a nanoscale triboelectrification-gated transistor.
  • To analyze the working principle of triboelectrification tuning carrier transport.
  • To explore the effects of various parameters on transistor modulation.

Main Methods:

  • Contact-mode atomic force microscopy (AFM)
  • Scanning Kelvin probe microscopy (SKPM)
  • Manipulated nanoscale triboelectrification

Main Results:

  • Nanoscale triboelectrification effectively tunes carrier transport in transistors.
  • Contact force, scan speed, cycles, and region influence transistor modulation.
  • Rewritable floating gate behavior demonstrated with applied tip voltage.

Conclusions:

  • Realized nanoscale triboelectric modulation on electronics.
  • Provides deep understanding for tribotronics theoretical mechanisms.
  • Potential applications in nanoscale transistors, micro/nano-electronic circuits, and nano-electromechanical systems (NEMS).