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Synthesis and optoelectronics of mixed-dimensional Bi/Te binary heterostructures.

Ye Zhang¹, Jia Guo, Yiguo Xu

¹Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P. R. China. hzhang@szu.edu.cn.

Nanoscale Horizons

|February 28, 2020

Summary

Researchers developed novel bismuth quantum dots/tellurium nanosheets (Bi QDs/Te NSs) heterostructures for enhanced photoelectrochemical photodetectors. These self-powered devices show high photocurrent and potential for ultrafast photonic applications.

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Published on: August 2, 2019

Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

Mixed-dimensional binary heterostructures, particularly 0D/2D, offer unique physical properties.
Bismuth quantum dots (Bi QDs) and Tellurium nanosheets (Te NSs) are promising materials for optoelectronic applications.

Purpose of the Study:

To prepare and characterize 0D Bi QDs immobilized onto 2D Te NSs to form Bi QDs/Te NSs binary heterostructures.
To investigate the photo-response behavior and performance of these heterostructures in photoelectrochemical (PEC)-type photodetectors (PDs).
To explore the potential of Bi/Te heterostructures for ultrafast photonic devices.

Main Methods:

Facile and cost-effective hydrothermal synthesis of Bi QDs/Te NSs binary heterostructures.
Fabrication of PEC-type photodetectors (PDs) using the synthesized Bi/Te materials.
Experimental characterization and Density Functional Theory (DFT) calculations to analyze material properties and device performance.

Main Results:

The Bi/Te heterostructures exhibited significantly enhanced photo-response compared to pristine Bi QDs and Te NSs.
The fabricated PDs achieved a high photocurrent of 18.21 μA cm⁻², demonstrating excellent self-power capability and stability over 30 days.
Ultrafast pulse output signals of 786 fs in the telecommunications band were observed, indicating potential for high-speed photonic applications.

Conclusions:

The Bi QDs/Te NSs binary heterostructures show great promise for developing high-performance, self-powered photodetectors.
These VA/VIA heterostructures offer opportunities for advancing multifunctional optoelectronic devices in nanoscience.
The study highlights the potential of mixed-dimensional heterostructures for next-generation photonic and optoelectronic technologies.