Related Experiment Video
Updated: Dec 27, 2025
14:52
Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
Published on: September 23, 2018
9.3K
Flexibility of Fluorinated Graphene-Based Materials.
Irina Antonova1,2,3, Nadezhda Nebogatikova1,2, Nabila Zerrouki4
1Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, 630090 Novosibirsk, Russia.
Materials (Basel, Switzerland)
|February 29, 2020
Summary
Fluorinated graphene (FG) films exhibit stable resistivity under strain, showing potential for flexible electronics. Compressive strain decreases resistivity, while tensile strain causes minor changes or increases, depending on fluorination and structure.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Flexible electronics require materials that maintain electrical properties under mechanical stress.
- Fluorinated graphene (FG) is explored for its unique electronic characteristics.
- Chemical vapor deposition (CVD)-grown graphene offers a scalable platform for FG fabrication.
Purpose of the Study:
- To investigate the electrical resistivity of fluorinated graphene (FG) films and structures under tensile and compressive strain.
- To understand the influence of fluorination degree and strain on the performance of FG-based flexible electronic devices.
- To evaluate the stability and potential of FG for applications in flexible electronics.
Main Methods:
- Fabrication of FG films and multilayer graphene by CVD and subsequent fluorination.
- Transfer of graphene films onto flexible substrates.
- Application of tensile and compressive strains through bending deformations.
- Measurement of electrical resistivity and resistance changes under varying strain levels.
- Characterization of resistive switching behavior in FG-based memristor structures.
Main Results:
- Compressive strain significantly decreased resistivity (1-2 orders of magnitude) in FG films, likely due to new conductive paths.
- Tensile strain up to 3% resulted in stable or irreversibly increased resistivity in CVD-grown FG.
- FG films from suspension (20-25% fluorination) showed stable resistivity up to 2-3% strain.
- Resistance changes of 14-28% were observed at 10% tensile strain.
- Bipolar resistive switching in FG/polyvinyl alcohol structures remained stable up to 6.5% tensile strain, with performance degradation at higher strains.
Conclusions:
- Fluorinated graphene films demonstrate promising stable electrical properties under significant tensile strain, making them suitable for flexible electronics.
- The observed changes in resistivity under strain are dependent on the fluorination degree and the specific structure of the FG material.
- FG films and structures, particularly those derived from suspensions, show excellent potential for next-generation flexible electronic devices, including memristors.
