Related Experiment Video
Updated: Dec 27, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Thermal stability of tungsten based metamaterial emitter under medium vacuum and inert gas conditions
Manohar Chirumamilla1, Gnanavel Vaidhyanathan Krishnamurthy2, Surya Snata Rout3
1Institute of Optical and Electronic Materials, Hamburg University of Technology, Eissendorfer Strasse 38, Hamburg, 21073, Germany. manohar.chirumamilla@tuhh.de.
Abstract:
Commercial deployment of thermophotovoltaics (TPV) is lacking behind the implementation of solar PV technology due to limited thermal stability of the selective emitter structures. Most of the TPV emitters demonstrated so far are designed to operate under high vacuum conditions (~10-6 mbar vacuum pressure), whereas under medium vacuum conditions (~10-2 mbar vacuum pressure), which are feasible in technical implementations of TPV, these emitters suffer from oxidation due to significant O2 partial pressure. In this work, the thermal stability of 1D refractory W-HfO2 based multilayered metamaterial emitter structure is investigated under different vacuum conditions. The impact of the O2 partial pressure on thermal stability of the emitters is experimentally quantified. We show that, under medium vacuum conditions, i.e. ~10-2 mbar vacuum pressure, the emitter shows unprecedented thermal stability up to 1300 °C when the residual O2 in the annealing chamber is minimized by encapsulating the annealing chamber with Ar atmosphere. This study presents a significant step in the experimental implementation of high temperature stable emitters under medium vacuum conditions, and their potential in construction of economically viable TPV systems. The high TPV efficiency, ~50% spectral efficiency for GaSb PV cell at 1300 °C, and high temperature stability make this platform well suited for technical application in next-generation TPV systems.
Related Concept Videos
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Standing Waves in a Cavity

