Thermal transport properties of monolayer MoSe2 with defects

Jiang-Jiang Ma1, Jing-Jing Zheng2, Wei-Dong Li3

  • 1Institute of Theoretical Physics, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, China and Dongguan Neutron Science Center, Dongguan 523803, China and Shanxi Key Laboratory of Electromagnetic Protection Material and Technology, 33th Institute of China Electronics Technology Group Corporation, Taiyuan 030032, China.

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