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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
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Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification.
S Schaal1, I Ahmed2, J A Haigh3
1London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom.
Physical Review Letters
|February 29, 2020
Summary
Researchers enhanced silicon quantum device readout speed using a Josephson parametric amplifier. This advancement enables faster single-shot readout of spin qubits, crucial for scalable quantum computing and error correction.
Area of Science:
- Quantum Computing
- Solid-State Physics
Background:
- Silicon quantum devices are promising for large-scale quantum computing.
- Gate-based sensing of spin qubits offers scalable readout but requires improved sensitivity for fast feedback in error correction.
Purpose of the Study:
- To enhance the sensitivity and reduce integration time for gate-based sensing of silicon spin qubits.
- To enable faster single-shot readout for fault-tolerant quantum computation.
Main Methods:
- Combined radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (500-800 MHz band).
- Utilized a silicon double quantum dot in a nanowire transistor for readout.
Main Results:
- Achieved a signal-to-noise ratio enabling an estimated 99.7% fidelity single-shot readout in 1 μs.
- Demonstrated a 30x speed improvement compared to systems without the Josephson parametric amplifier.
- Reduced radio-frequency power requirements while maintaining signal-to-noise ratio.
Conclusions:
- The integration of Josephson parametric amplifiers significantly accelerates spin qubit readout in silicon.
- Achieved readout speeds meet requirements for fault-tolerant quantum computing.
- Identified noise sources and outlined pathways for further readout speed enhancement.
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