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High efficiency spin filtering in magnetic phosphorene.

P Kumari1, S Majumder, S Rani

  • 1Department of Physics, Indian Institute of Technology Patna, Bihta 801106, India. ray@iitp.ac.in.

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Summary
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Magnetically engineered phosphorene exhibits perfect spin filtering. Doping with transition metals like Ti, Cr, Mn, Co, and Fe creates half-metallic states, enabling 100% spin polarization for advanced spintronic circuits.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Phosphorene is a 2D material with promising electronic and spintronic properties.
  • Stable magnetic order in phosphorene is crucial for developing spin circuits.
  • Existing research highlights phosphorene's potential in nanoelectronics and optoelectronics.

Purpose of the Study:

  • To investigate the introduction of stable magnetic order in phosphorene through doping.
  • To explore the spin filtering behavior and efficiency in magnetically engineered phosphorene.
  • To engineer multi-functional phosphorene-based spintronic circuits.

Main Methods:

  • Computational simulation of 3d block element doping in phosphorene.
  • Phase diagram analysis to identify electronic and magnetic states.
  • Transport property calculations to determine spin injection efficiency.

Main Results:

  • Achieved high magnetization and spin polarization (~100%) in half-metallic regimes via doping.
  • Demonstrated perfect spin filtering capacity (~100%) with specific transition metal dopants (Ti, Cr, Mn, Co, Fe).
  • Obtained an extensive phase diagram showing various electronic and magnetic states based on doping concentration and configuration.

Conclusions:

  • Magnetically rendered phosphorene shows high-efficiency spin filtering capabilities.
  • Doping phosphorene with 3d transition metals is an effective strategy for spintronic applications.
  • The findings provide insights for designing advanced phosphorene spintronic devices.