Muon implantation experiments in films: Obtaining depth-resolved information

Area of Science:

• Materials Science
• Condensed Matter Physics
• Surface Science

Background:

• Low-energy muons (1-30 keV) are effective local probes for thin films and multi-layer structures.
• Muon stopping depth depends on implantation energy and material density, extending over tens of nanometers.
• Extracting depth-dependent experimental parameters requires adequate simulation procedures.

Purpose of the Study:

• To present a method for extracting depth-resolved information from low-energy muon spin spectroscopy (LE-μSR) experiments.
• To demonstrate the application of this method to analyze heterostructures.
• To identify the location and depth extent of experimental effects.

Main Methods:

• Utilizing the implantation energy dependence of experimental parameters in LE-μSR.
• Developing a simulation procedure to analyze depth-resolved data.
• Applying the method to a Cu(In,Ga)Se2 semiconductor film with an Al2O3 coating.

Main Results:

• Successfully extracted depth-resolved information from LE-μSR data.
• Demonstrated the method's applicability to semiconductor/insulator heterostructures.
• Confirmed the method's ability to pinpoint the location and depth of observed effects.

Conclusions:

• The presented method enables depth profiling in thin films and heterostructures using LE-μSR.
• This technique is crucial for understanding material properties at the nanoscale.
• It provides a valuable tool for identifying and localizing phenomena within complex layered materials.