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Current Rerouting Improves Heat Removal in Few-Layer WSe Devices.

Arnab K Majee1, Zahra Hemmat2, Cameron J Foss1

  • 1Department of Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003-9292, United States.

ACS Applied Materials & Interfaces
|March 4, 2020
PubMed
Summary

Few-layer (FL) transition-metal dichalcogenides like WSe2 experience self-heating, degrading performance. Current reroutes to cooler bottom layers, improving heat removal and device mobility in few-layer WSe2 devices.

Keywords:
Raman thermometryelectrothermalfew-layered TMDsfield-effect transistorsmobilityphononsself-heatingthermal boundary conductance

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Few-layer (FL) transition-metal dichalcogenides (TMDs) show promise for nanoelectronics due to enhanced carrier mobility.
  • Self-heating effects in FL-TMDs under operating conditions negatively impact their electronic and thermal properties.

Purpose of the Study:

  • To investigate the electrothermal behavior of few-layer WSe2 devices.
  • To understand the impact of Joule heating on carrier mobility and current distribution.
  • To explore strategies for optimizing device performance and thermal management.

Main Methods:

  • Fabrication of few-layer WSe2 devices.
  • Measurement of current-voltage (I-V) characteristics.
  • Quantification of device temperature using Raman thermometry.
  • First-principles simulations for thermal analysis.

Main Results:

  • Joule heating causes significant, layer-dependent temperature increases in FL-WSe2 devices.
  • Elevated temperatures in top layers degrade mobility, leading to current rerouting to cooler bottom layers.
  • Current rerouting enhances heat dissipation by flowing through layers with higher thermal conductance.
  • Lateral heat removal through contacts is observed, influenced by thermal healing length.

Conclusions:

  • Self-heating significantly affects carrier mobility and current flow in FL-WSe2 devices.
  • Current rerouting to bottom layers is a beneficial phenomenon for thermal management.
  • Understanding layer-dependent thermal effects is crucial for optimizing FL-TMD device design and performance.