Spin-polarized quantum transport in Si dangling bond wires
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Updated: Dec 27, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Qi An1, Chen Hu2, Guanghua Yu3
1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China and Department of Physics, McGill University, 3600 rue university, Montréal, Québec H3A 2T8, Canada. qi.an@mail.mcgill.ca and Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succursale Centre-Ville, Montréal, Québec H3C 3A7, Canada.
Abstract:
We report theoretical modeling of spin-dependent quantum transport properties of dangling bond wires (DBWs) on the Si(100)-2 × 1:H surface. A single spin-polarized dangling bond center (DBC) near the DBW may strongly affect transport as characterized by anti-resonances or dips in the transmission spectra. Such spin-dependent gating can be effective up to a distance of 1.5 nanometer between the DBW and the DBC. At the energies where anti-resonances occur, the scattering states of the system are found to be "attracted" to the DBC - rather than moving forward to the existing electrode. The variety of gating effects can be well organized by a physical picture, i.e. a strong hybridization or interaction between the spin-polarized DBW and DBC occurs with the same spin polarization (at DBW and DBC) and at similar energy. The sharp spin-resolved anti-resonance in the DBW gives rise to a spin-filtering effect up to 100% efficiency.
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