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Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing
Lei Wu1, Hongxia Liu1, Jinfu Lin1
1Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Abstract:
A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device's cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 105 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.
